PART |
Description |
Maker |
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
PHP73N06T PHB73N06T |
N-channel enhancement mode field-effect transistor 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT |
N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
H06N60 TO-220AB TO-263 TO-220FP |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
|
H07N60 H07N60F H07N60E |
N-Channel Power Field Effect Transistor
|
HSMC[Hi-Sincerity Mocroelectronics]
|
H05N60 H05N60F H05N60E |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp. HSMC[Hi-Sincerity Mocroelectronics]
|
NDB710A NDB710BE NDB710AE NDB710B NDP710BE NDB410A |
N-Channel Enhancement Mode Field Effect Transistor 40 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|